Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 1V @ 200mA, 1A
- Power Dissipation
- 2.8W
- Max Power Dissipation
- 2.8W
- Pin Sayısı
- 3
- Montaj
- Through Hole
- Max Breakdown Voltage
- 500V
- Contact Plating
- Tin
- Max Collector Current
- 1.5A
- Emitter Base Voltage Vebo
- 12V
- Hfemin
- 4
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collectoremitter Saturation Voltage
- 1V
- Pin Sayısı
- 3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Radyasyon Dayanımı
- No
- Terminal Pozisyonu
- BOTTOM
- Transistor Application
- SWITCHING
- Transistor Type
- NPN
- Montaj Tipi
- Through Hole
- Element Configuration
- Single
- Collector Emitter Voltage Vceo
- 500V
- Fabrika Tedarik Süresi
- 8 Weeks
- Yükseklik
- 4.95mm
- ECCN Kodu
- EAR99
- Parça Durumu
- Active
- Max Junction Temperature Tj
- 150°C
- Ambalaj
- Tape & Box (TB)
- Terminal Sayısı
- 3
- Collectoremitter Breakdown Voltage
- 500V
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Temel Parça No
- STX616
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Çalışma Sıcaklığı
- 150°C TJ
- Polaritychannel Type
- NPN
- Dc Current Gain Hfe Min Ic Vce
- 12 @ 500mA 5V
- Current Collector Cutoff Max
- 50μA
- Kurşunsuz
- Lead Free
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