STWA45N65M5

Specifications

Rds On Max Id Vgs

78m Ω @ 17.5A, 10V

Fall Time Typ

9.3 ns

Avalanche Energy Rating Eas

810 mJ

Current Continuous Drain Id25

35A Tc

Power Dissipation

210W

Continuous Drain Current Id

35A

Montaj

Through Hole

Pin Sayısı

3

Gate To Source Voltage Vgs

25V

Turn On Delay Time

79.5 ns

Transistor Application

SWITCHING

Power Dissipation Max

210W Tc

Gate Charge Qg Max Vgs

82nC @ 10V

Montaj Tipi

Through Hole

Drainsource On Resistancemax

0.078Ohm

Kılıf / Paket

TO-247-3

RoHS Durumu

ROHS3 Compliant

Seri

MDmesh™ V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

650V

Turn Off Delay Time

16 ns

Radyasyon Dayanımı

No

ECCN Kodu

EAR99

Parça Durumu

Active

Ambalaj

Tube

Operating Mode

ENHANCEMENT MODE

Input Capacitance Ciss Max Vds

3470pF @ 100V

Terminal Sayısı

3

Element Configuration

Single

Vgsth Max Id

5V @ 250μA

Fabrika Tedarik Süresi

17 Weeks

Pulsed Drain Currentmax Idm

140A

Transistor Element Material

SILICON

Number Of Elements

1

Çalışma Sıcaklığı

150°C TJ

Rise Time

11ns

Kurşunsuz

Lead Free

Drive Voltage Max Rds On Min Rds On

10V

Vgs Max

±25V

Fet Type

N-Channel