STW9NK70Z

Specifications

Operating Mode

ENHANCEMENT MODE

Terminal Sayısı

3

Input Capacitance Ciss Max Vds

1370pF @ 25V

Yükseklik

5.3mm

Parça Durumu

Obsolete

Ambalaj

Tube

Vgsth Max Id

4.5V @ 100μA

Element Configuration

Single

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

17ns

Genişlik

20.3mm

Kurşunsuz

Lead Free

Voltage Rated Dc

700V

Uzunluk

15.9mm

Transistor Element Material

SILICON

Number Of Elements

1

Vgs Max

±30V

Fet Type

N-Channel

Kurşunsuz Kodu

yes

Temel Parça No

STW9N

Drive Voltage Max Rds On Min Rds On

10V

Fall Time Typ

13 ns

Rds On Max Id Vgs

1.2 Ω @ 4A, 10V

Current Continuous Drain Id25

7.5A Tc

Power Dissipation

156W

Reach Svhc

No SVHC

Continuous Drain Current Id

7.5A

Pin Sayısı

3

Montaj

Through Hole

Gate To Source Voltage Vgs

30V

JESD-609 Kodu

e3

Power Dissipation Max

156W Tc

Montaj Tipi

Through Hole

Gate Charge Qg Max Vgs

68nC @ 10V

Threshold Voltage

3.75V

Turn On Delay Time

22 ns

Transistor Application

SWITCHING

Pin Sayısı

3

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

700V