Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 1.5kV
- Terminal Kaplaması
- Tin (Sn)
- Montaj Tipi
- Through Hole
- Transistor Application
- SWITCHING
- Turn On Delay Time
- 41 ns
- Pin Sayısı
- 3
- Fall Time Typ
- 52 ns
- Avalanche Energy Rating Eas
- 720 mJ
- Vgs Max
- ±30V
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Temel Parça No
- STW9N
- Drive Voltage Max Rds On Min Rds On
- 10V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 14.7ns
- Kurşunsuz
- Lead Free
- Uzunluk
- 15.75mm
- Transistor Element Material
- SILICON
- Number Of Elements
- 1
- Vgsth Max Id
- 5V @ 250μA
- Fabrika Tedarik Süresi
- 12 Weeks
- Drain Currentmax Abs Id
- 8A
- Drain To Source Voltage Vdss
- 1500V
- ECCN Kodu
- EAR99
- Max Junction Temperature Tj
- 150°C
- Ambalaj
- Tube
- Pin Sayısı
- 3
- Turn Off Delay Time
- 86 ns
- Radyasyon Dayanımı
- No
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-247-3
- Seri
- PowerMESH™
- Power Dissipation Max
- 320W Tc
- Gate Charge Qg Max Vgs
- 89.3nC @ 10V
- Threshold Voltage
- 4V
- Reach Svhc
- No SVHC
- Current Continuous Drain Id25
- 8A Tc
- Power Dissipation
- 320W
- Continuous Drain Current Id
- 8A
- Montaj
- Through Hole
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