STW7N95K3

Specifications

Gate Charge Qg Max Vgs

34nC @ 10V

Turn Off Delay Time

36 ns

Avalanche Energy Rating Eas

220 mJ

Number Of Elements

1

Montaj

Through Hole

Terminal Kaplaması

Matte Tin (Sn)

RoHS Durumu

ROHS3 Compliant

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

950V

Uzunluk

15.75mm

Fall Time Typ

23 ns

Jedec95 Code

TO-247AC

Seri

SuperMESH3™

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

12 Weeks

Turn On Delay Time

14 ns

JESD-609 Kodu

e3

Genişlik

5.15mm

Pulsed Drain Currentmax Idm

28.8A

Montaj Tipi

Through Hole

Terminal Sayısı

3

Current Continuous Drain Id25

7.2A Tc

Transistor Application

SWITCHING

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

7.2A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Power Dissipation Max

150W Tc

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Yükseklik

20.15mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

1031pF @ 100V

Rds On Max Id Vgs

1.35 Ω @ 3.6A, 10V

Kurşunsuz

Lead Free