STW60NE10

Specifications

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Power Dissipation

180W

Çalışma Sıcaklığı

175°C TJ

Rise Time

45ns

Continuous Drain Current Id

60A

Parça Durumu

Obsolete

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Terminal Sayısı

3

Vgs Max

±20V

Current Continuous Drain Id25

60A Tc

Transistor Application

SWITCHING

Vgsth Max Id

4V @ 250μA

Qualification Status

Not Qualified

JESD-609 Kodu

e0

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

240A

Temel Parça No

STW60N

Kurşunsuz

Contains Lead

REACH Uyumluluk Kodu

not_compliant

Element Configuration

Single

Jedec95 Code

TO-247AC

Seri

STripFET™

Input Capacitance Ciss Max Vds

5300pF @ 25V

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

22m Ω @ 30A, 10V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

100V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

45 ns

Power Dissipation Max

180W Tc

Operating Mode

ENHANCEMENT MODE

Avalanche Energy Rating Eas

500 mJ

Number Of Elements

1

Jesd30 Code

R-PSFM-T3