Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 139nC @ 10V
- Turn Off Delay Time
- 13 ns
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Through Hole
- Terminal Kaplaması
- Matte Tin (Sn)
- Number Of Elements
- 1
- Power Dissipation Max
- 255W Tc
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 15.75mm
- Fall Time Typ
- 16 ns
- Drain To Source Breakdown Voltage
- 650V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Kılıf / Paket
- TO-247-3
- Threshold Voltage
- 4V
- Rds On Max Id Vgs
- 59m Ω @ 23A, 10V
- Reach Svhc
- No SVHC
- Input Capacitance Ciss Max Vds
- 6810pF @ 100V
- Seri
- MDmesh™ V
- Yükseklik
- 20.15mm
- Element Configuration
- Single
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW60N
- Additional Feature
- ULTRA-LOW RESISTANCE
- Genişlik
- 5.15mm
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 90 ns
- Vgsth Max Id
- 5V @ 250μA
- JESD-609 Kodu
- e3
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Direnç
- 59MOhm
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 46A Tc
- Terminal Sayısı
- 3
- Vgs Max
- ±25V
- Gate To Source Voltage Vgs
- 25V
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