Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Channels
- 1
- Vgsth Max Id
- 5V @ 250μA
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW55N
- Max Junction Temperature Tj
- 150°C
- Rise Time
- 68ns
- Çalışma Sıcaklığı
- 150°C TJ
- Power Dissipation
- 350W
- Direnç
- 60MOhm
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Vgs Max
- ±25V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 350W Tc
- Threshold Voltage
- 4V
- Rds On Max Id Vgs
- 60m Ω @ 25.5A, 10V
- Input Capacitance Ciss Max Vds
- 5800pF @ 50V
- Element Configuration
- Single
- Yükseklik
- 24.45mm
- Ambalaj
- Tube
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Pulsed Drain Currentmax Idm
- 204A
- Montaj Tipi
- Through Hole
- Genişlik
- 5.15mm
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 33 ns
- Gate To Source Voltage Vgs
- 25V
- Parça Durumu
- Obsolete
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 51A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 51A Tc
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Number Of Elements
- 1
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