Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 190nC @ 10V
- Turn Off Delay Time
- 225 ns
- Number Of Elements
- 1
- Avalanche Energy Rating Eas
- 850 mJ
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 350W Tc
- RoHS Durumu
- ROHS3 Compliant
- Terminal Kaplaması
- Tin (Sn)
- Montaj
- Through Hole
- Ambalaj
- Tube
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Fall Time Typ
- 70 ns
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 600V
- Seri
- MDmesh™ II
- Input Capacitance Ciss Max Vds
- 5800pF @ 50V
- Jedec95 Code
- TO-247AC
- REACH Uyumluluk Kodu
- not_compliant
- Element Configuration
- Single
- Rds On Max Id Vgs
- 60m Ω @ 25.5A, 10V
- Kılıf / Paket
- TO-247-3
- Temel Parça No
- STW55N
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 4V @ 250μA
- Qualification Status
- Not Qualified
- JESD-609 Kodu
- e3
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 204A
- Current Continuous Drain Id25
- 51A Tc
- Vgs Max
- ±25V
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Direnç
- 60MOhm
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- 150°C TJ
- Rise Time
- 30ns
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