STW42N65M5

Specifications

Turn Off Delay Time

65 ns

Gate Charge Qg Max Vgs

100nC @ 10V

Number Of Elements

1

Avalanche Energy Rating Eas

950 mJ

Terminal Kaplaması

Tin (Sn)

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Manufacturer Package Identifier

STW42N65M5

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

650V

Uzunluk

15.75mm

Fall Time Typ

13 ns

Seri

MDmesh™ V

Kılıf / Paket

TO-247-3

Reach Svhc

No SVHC

Fabrika Tedarik Süresi

17 Weeks

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Turn On Delay Time

61 ns

JESD-609 Kodu

e3

Genişlik

5.15mm

Montaj Tipi

Through Hole

Terminal Sayısı

3

Current Continuous Drain Id25

33A Tc

Transistor Application

SWITCHING

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

33A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

25V

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Yükseklik

24.45mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

4650pF @ 100V

Threshold Voltage

4V

Rds On Max Id Vgs

79m Ω @ 16.5A, 10V