Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 20.15mm
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 2950pF @ 100V
- Seri
- MDmesh™ V
- Kılıf / Paket
- TO-247-3
- Rds On Max Id Vgs
- 80m Ω @ 16.5A, 10V
- Fabrika Tedarik Süresi
- 17 Weeks
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 550V
- Uzunluk
- 15.75mm
- Power Dissipation Max
- 190W Tc
- Operating Mode
- ENHANCEMENT MODE
- Number Of Elements
- 1
- Montaj
- Through Hole
- RoHS Durumu
- ROHS3 Compliant
- Turn Off Delay Time
- 56 ns
- Gate Charge Qg Max Vgs
- 62nC @ 10V
- Drainsource On Resistancemax
- 0.08Ohm
- Drive Voltage Max Rds On Min Rds On
- 10V
- Power Dissipation
- 190W
- Çalışma Sıcaklığı
- 150°C TJ
- Continuous Drain Current Id
- 33A
- Parça Durumu
- Active
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 25V
- Terminal Sayısı
- 3
- Vgs Max
- ±25V
- Current Continuous Drain Id25
- 33A Tc
- Radyasyon Dayanımı
- No
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Turn On Delay Time
- 56 ns
- Vgsth Max Id
- 5V @ 250μA
- Genişlik
- 5.15mm
- Montaj Tipi
- Through Hole
- Temel Parça No
- STW36N
- Kurşunsuz
- Lead Free
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