STW30NM60N

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

70 ns

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

Transistor Element Material

SILICON

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

130m Ω @ 12.5A, 10V

Jedec95 Code

TO-247AC

Input Capacitance Ciss Max Vds

2700pF @ 50V

Seri

MDmesh™ II

Element Configuration

Single

REACH Uyumluluk Kodu

unknown

Gate Charge Qg Max Vgs

91nC @ 10V

Turn Off Delay Time

125 ns

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Terminal Kaplaması

TIN

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Avalanche Energy Rating Eas

900 mJ

Power Dissipation Max

190W Tc

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Direnç

130mOhm

Current Continuous Drain Id25

25A Tc

Terminal Sayısı

3

Vgs Max

±30V

Gate To Source Voltage Vgs

30V

Continuous Drain Current Id

25A

Fet Type

N-Channel

Parça Durumu

Obsolete

Power Dissipation

190W

Çalışma Sıcaklığı

150°C TJ

Rise Time

24ns

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz

Lead Free

Temel Parça No

STW30N

Montaj Tipi

Through Hole