STW28N65M2

Specifications

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Uzunluk

15.75mm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

16 Weeks

Rds On Max Id Vgs

180m Ω @ 10A, 10V

Kılıf / Paket

TO-247-3

Input Capacitance Ciss Max Vds

1440pF @ 100V

Seri

MDmesh™ M2

Element Configuration

Single

Yükseklik

20.15mm

Drainsource On Resistancemax

0.18Ohm

Turn Off Delay Time

59 ns

Gate Charge Qg Max Vgs

35nC @ 10V

Drain To Source Voltage Vdss

650V

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Number Of Elements

1

Avalanche Energy Rating Eas

760 mJ

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

170W Tc

Transistor Application

SWITCHING

Pin Sayısı

3

Current Continuous Drain Id25

20A Tc

Ds Breakdown Voltagemin

650V

Vgs Max

±25V

Terminal Sayısı

3

Gate To Source Voltage Vgs

25V

Parça Durumu

Active

Fet Type

N-Channel

Continuous Drain Current Id

20A

Çalışma Sıcaklığı

150°C TJ

Drive Voltage Max Rds On Min Rds On

10V

Temel Parça No

STW28N

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

80A

Genişlik

5.15mm

Vgsth Max Id

4V @ 250μA