STW24N60DM2

Specifications

Vgs Max

±25V

Terminal Sayısı

3

Current Continuous Drain Id25

18A Tc

Pin Sayısı

3

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

10V

Rise Time

8.7ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Parça Durumu

Active

Continuous Drain Current Id

18A

Gate To Source Voltage Vgs

25V

Weight

38.000013g

Kurşunsuz

Lead Free

Temel Parça No

STW24N

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

5V @ 250μA

Turn On Delay Time

15 ns

Pulsed Drain Currentmax Idm

72A

Number Of Channels

1

Montaj Tipi

Through Hole

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

15 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Element Configuration

Single

Seri

FDmesh™ II Plus

Input Capacitance Ciss Max Vds

1055pF @ 100V

Rds On Max Id Vgs

200m Ω @ 9A, 10V

Kılıf / Paket

TO-247-3

Fabrika Tedarik Süresi

17 Weeks

Gate Charge Qg Max Vgs

29nC @ 10V

Turn Off Delay Time

60 ns

Drainsource On Resistancemax

0.2Ohm

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

150W Tc