STW23NM60N

Specifications

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

36 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Kurşunsuz Kodu

yes

Transistor Element Material

SILICON

Ambalaj

Tube

Rds On Max Id Vgs

180m Ω @ 9.5A, 10V

Kılıf / Paket

TO-247-3

Element Configuration

Single

Input Capacitance Ciss Max Vds

2050pF @ 50V

Seri

MDmesh™ II

Drainsource On Resistancemax

0.18Ohm

Gate Charge Qg Max Vgs

60nC @ 10V

Turn Off Delay Time

90 ns

Terminal Kaplaması

TIN

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

150W Tc

Avalanche Energy Rating Eas

700 mJ

Number Of Elements

1

Pin Sayısı

3

Transistor Application

SWITCHING

Vgs Max

±25V

Terminal Sayısı

3

Current Continuous Drain Id25

19A Tc

Parça Durumu

Obsolete

Fet Type

N-Channel

Continuous Drain Current Id

9.5A

Gate To Source Voltage Vgs

25V

Drain Currentmax Abs Id

19A

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Rise Time

15ns

Çalışma Sıcaklığı

150°C TJ

Power Dissipation

150W

Temel Parça No

STW23N

Pulsed Drain Currentmax Idm

76A

Montaj Tipi

Through Hole