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Support
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Specifications
- Ds Breakdown Voltagemin
- 500V
- Radyasyon Dayanımı
- No
- Vgs Max
- ±25V
- Pin Sayısı
- 3
- Direnç
- 190mOhm
- Power Dissipation
- 125W
- Rise Time
- 19ns
- Çalışma Sıcaklığı
- 150°C TJ
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW23N
- Vgsth Max Id
- 4V @ 250μA
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 1330pF @ 50V
- Yükseklik
- 20.15mm
- Rds On Max Id Vgs
- 190m Ω @ 8.5A, 10V
- Threshold Voltage
- 3V
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Power Dissipation Max
- 125W Tc
- Operating Mode
- ENHANCEMENT MODE
- Current Continuous Drain Id25
- 17A Tc
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Gate To Source Voltage Vgs
- 25V
- Continuous Drain Current Id
- 17A
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Terminal Pozisyonu
- SINGLE
- Turn On Delay Time
- 6.6 ns
- JESD-609 Kodu
- e3
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Genişlik
- 5.15mm
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 68A
- Uzunluk
- 15.75mm
- Fall Time Typ
- 29 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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