Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 60nC @ 10V
- Turn Off Delay Time
- 70 ns
- Number Of Elements
- 1
- Power Dissipation Max
- 140W Tc
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin (Sn)
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Uzunluk
- 15.75mm
- Fall Time Typ
- 48 ns
- Drain To Source Breakdown Voltage
- 600V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 1800pF @ 50V
- Seri
- FDmesh™ II
- Yükseklik
- 20.15mm
- Element Configuration
- Single
- Fabrika Tedarik Süresi
- 42 Weeks
- Kılıf / Paket
- TO-247-3
- Threshold Voltage
- 4V
- Rds On Max Id Vgs
- 220m Ω @ 8.5A, 10V
- Reach Svhc
- No SVHC
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW21N
- Turn On Delay Time
- 18 ns
- JESD-609 Kodu
- e3
- Vgsth Max Id
- 5V @ 250μA
- Genişlik
- 5.15mm
- Pulsed Drain Currentmax Idm
- 68A
- Montaj Tipi
- Through Hole
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 17A Tc
- Terminal Sayısı
- 3
- Vgs Max
- ±25V
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Direnç
- 220mOhm
- Power Dissipation
- 140W
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