Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fall Time Typ
- 30 ns
- Drain To Source Breakdown Voltage
- 500V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- Rds On Max Id Vgs
- 190m Ω @ 9A, 10V
- Kılıf / Paket
- TO-247-3
- Input Capacitance Ciss Max Vds
- 1950pF @ 25V
- Seri
- MDmesh™ II
- Element Configuration
- Single
- Gate Charge Qg Max Vgs
- 65nC @ 10V
- Turn Off Delay Time
- 90 ns
- Akım Değeri
- 18A
- RoHS Durumu
- ROHS3 Compliant
- Voltage Rated Dc
- 500V
- Montaj
- Through Hole
- Terminal Kaplaması
- Tin (Sn)
- Avalanche Energy Rating Eas
- 480 mJ
- Number Of Elements
- 1
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 140W Tc
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 18A Tc
- Radyasyon Dayanımı
- No
- Vgs Max
- ±25V
- Terminal Sayısı
- 3
- Gate To Source Voltage Vgs
- 25V
- Fet Type
- N-Channel
- Parça Durumu
- Obsolete
- Continuous Drain Current Id
- 18A
- Çalışma Sıcaklığı
- 150°C TJ
- Rise Time
- 18ns
- Power Dissipation
- 140W
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW21N
- Pulsed Drain Currentmax Idm
- 72A
- Montaj Tipi
- Through Hole
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