STW21N90K5

Specifications

Direnç

299MOhm

Vgs Max

±30V

Radyasyon Dayanımı

No

Max Junction Temperature Tj

150°C

Power Dissipation

250W

Rise Time

27ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Temel Parça No

STW21N

Kurşunsuz

Lead Free

Number Of Channels

1

Vgsth Max Id

5V @ 100μA

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Ambalaj

Tube

Rds On Max Id Vgs

299m Ω @ 9A, 10V

Threshold Voltage

4V

Yükseklik

24.45mm

Input Capacitance Ciss Max Vds

1645pF @ 100V

Configuration

SINGLE WITH BUILT-IN DIODE

Jesd30 Code

R-PSFM-T3

Power Dissipation Max

250W Tc

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Terminal Sayısı

3

Current Continuous Drain Id25

18.5A Tc

Continuous Drain Current Id

18.5A

Parça Durumu

Active

Fet Type

N-Channel

Gate To Source Voltage Vgs

30V

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Terminal Pozisyonu

SINGLE

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

68A

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Turn On Delay Time

17 ns

JESD-609 Kodu

e3

Drain To Source Breakdown Voltage

900V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

40 ns