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Support
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Specifications
- Pin Sayısı
- 3
- Direnç
- 290mOhm
- Vgs Max
- ±30V
- Radyasyon Dayanımı
- No
- Max Junction Temperature Tj
- 150°C
- Power Dissipation
- 214W
- Rise Time
- 12ns
- Çalışma Sıcaklığı
- -65°C~150°C TJ
- Temel Parça No
- STW20N
- Kurşunsuz
- Lead Free
- Number Of Channels
- 1
- Vgsth Max Id
- 5V @ 250μA
- Contact Plating
- Tin
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Rds On Max Id Vgs
- 290m Ω @ 10A, 10V
- Threshold Voltage
- 3V
- Yükseklik
- 24.45mm
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 1300pF @ 25V
- Akım Değeri
- 20A
- Power Dissipation Max
- 214W Tc
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Current Continuous Drain Id25
- 20A Tc
- Continuous Drain Current Id
- 20A
- Parça Durumu
- Active
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Genişlik
- 5.15mm
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 80A
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Turn On Delay Time
- 25 ns
- JESD-609 Kodu
- e3
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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