Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 34nC @ 10V
- Turn Off Delay Time
- 13 ns
- Drainsource On Resistancemax
- 0.29Ohm
- Avalanche Energy Rating Eas
- 187 mJ
- Number Of Elements
- 1
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 110W Tc
- Drain To Source Voltage Vdss
- 600V
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Through Hole
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Fall Time Typ
- 18 ns
- Uzunluk
- 15.75mm
- Drain To Source Breakdown Voltage
- 650V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 1030pF @ 50V
- Seri
- FDmesh™ II
- Element Configuration
- Single
- Yükseklik
- 20.15mm
- Rds On Max Id Vgs
- 290m Ω @ 6.5A, 10V
- Kılıf / Paket
- TO-247-3
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW18N
- Vgsth Max Id
- 5V @ 250μA
- Turn On Delay Time
- 55 ns
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 52A
- Genişlik
- 5.15mm
- Radyasyon Dayanımı
- No
- Current Continuous Drain Id25
- 13A Tc
- Vgs Max
- ±25V
- Terminal Sayısı
- 3
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Rise Time
- 15.5ns
- Çalışma Sıcaklığı
- 150°C TJ
- Drive Voltage Max Rds On Min Rds On
- 10V
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