STW18NK80Z

Specifications

Rds On Max Id Vgs

380m Ω @ 10A, 10V

Kılıf / Paket

TO-247-3

Element Configuration

Single

REACH Uyumluluk Kodu

not_compliant

Seri

SuperMESH™

Input Capacitance Ciss Max Vds

6100pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

800V

Fall Time Typ

32 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Ambalaj

Tube

Voltage Rated Dc

800V

Jesd30 Code

R-PSFM-T3

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Through Hole

Akım Değeri

19A

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

350W Tc

Number Of Elements

1

Avalanche Energy Rating Eas

700 mJ

Drainsource On Resistancemax

0.38Ohm

Gate Charge Qg Max Vgs

250nC @ 10V

Turn Off Delay Time

140 ns

Parça Durumu

Obsolete

Fet Type

N-Channel

Continuous Drain Current Id

19A

Gate To Source Voltage Vgs

30V

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

32ns

Power Dissipation

350W

Transistor Application

SWITCHING

Vgs Max

±30V

Terminal Sayısı

3

Current Continuous Drain Id25

19A Tc

Montaj Tipi

Through Hole