Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Vgs Max
- ±30V
- Direnç
- 280mOhm
- Pin Sayısı
- 3
- Rise Time
- 26ns
- Çalışma Sıcaklığı
- 150°C TJ
- Power Dissipation
- 190W
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW17N
- Vgsth Max Id
- 4.5V @ 100μA
- Additional Feature
- AVALANCHE ENERGY RATED
- Ambalaj
- Tube
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 2500pF @ 50V
- Element Configuration
- Single
- Yükseklik
- 20.15mm
- Rds On Max Id Vgs
- 380m Ω @ 7.5A, 10V
- Threshold Voltage
- 3.75V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 190W Tc
- Current Continuous Drain Id25
- 15.5A Tc
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Pin Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 30V
- Parça Durumu
- Obsolete
- Fet Type
- N-Channel
- Continuous Drain Current Id
- 15.5A
- JESD-609 Kodu
- e3
- Turn On Delay Time
- 22 ns
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 60A
- Genişlik
- 5.15mm
- Kurşunsuz Kodu
- yes
- Fall Time Typ
- 63 ns
- Uzunluk
- 15.75mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 620V
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