STW15NM60N

Specifications

Temel Parça No

STW15N

Vgsth Max Id

4V @ 250μA

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

JESD-609 Kodu

e3

Pulsed Drain Currentmax Idm

56A

Montaj Tipi

Through Hole

Current Continuous Drain Id25

14A Tc

Terminal Sayısı

3

Vgs Max

±25V

Transistor Application

SWITCHING

Power Dissipation

125W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

14ns

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Gate To Source Voltage Vgs

25V

Continuous Drain Current Id

14A

Fet Type

N-Channel

Parça Durumu

Obsolete

Gate Charge Qg Max Vgs

37nC @ 10V

Turn Off Delay Time

80 ns

Drainsource On Resistancemax

0.299Ohm

Number Of Elements

1

Avalanche Energy Rating Eas

300 mJ

Power Dissipation Max

125W Tc

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Montaj

Through Hole

Terminal Kaplaması

Tin (Sn)

Jesd30 Code

R-PSFM-T3

Ambalaj

Tube

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

30 ns

Drain To Source Breakdown Voltage

600V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

1250pF @ 50V

Seri

MDmesh™ II