Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Avalanche Energy Rating Eas
- 400 mJ
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 190W Tc
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Through Hole
- Turn Off Delay Time
- 50 ns
- Gate Charge Qg Max Vgs
- 51nC @ 10V
- Seri
- SuperMESH3™
- Input Capacitance Ciss Max Vds
- 1620pF @ 100V
- Element Configuration
- Single
- Yükseklik
- 20.15mm
- Threshold Voltage
- 4V
- Rds On Max Id Vgs
- 850m Ω @ 5A, 10V
- Reach Svhc
- No SVHC
- Kılıf / Paket
- TO-247-3
- Ambalaj
- Tube
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Fall Time Typ
- 21 ns
- Uzunluk
- 15.75mm
- Drain To Source Breakdown Voltage
- 950V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 5V @ 100μA
- Turn On Delay Time
- 18 ns
- Lifecycle Status
- NRND (Last Updated: 8 months ago)
- Additional Feature
- ULTRA-LOW RESISTANCE
- Montaj Tipi
- Through Hole
- Pulsed Drain Currentmax Idm
- 40A
- Genişlik
- 5.15mm
- Temel Parça No
- STW13N
- Kurşunsuz
- Lead Free
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 16ns
- Power Dissipation
- 190W
- Pin Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 30V
- Parça Durumu
- Active
- Fet Type
- N-Channel
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