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Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 312W
- Çalışma Sıcaklığı
- -55°C~175°C TJ
- Rise Time
- 90ns
- Pin Sayısı
- 3
- Direnç
- 10.5mOhm
- Vgs Max
- ±20V
- Radyasyon Dayanımı
- No
- Additional Feature
- AVALANCHE RATED
- Vgsth Max Id
- 4V @ 250μA
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW120
- Rds On Max Id Vgs
- 10.5m Ω @ 60A, 10V
- Threshold Voltage
- 4V
- Yükseklik
- 20.15mm
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 5200pF @ 25V
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Ambalaj
- Tube
- Akım Değeri
- 120A
- Power Dissipation Max
- 312W Tc
- Operating Mode
- ENHANCEMENT MODE
- Continuous Drain Current Id
- 110A
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Case Connection
- DRAIN
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Current Continuous Drain Id25
- 110A Tc
- Genişlik
- 5.15mm
- Pulsed Drain Currentmax Idm
- 440A
- Montaj Tipi
- Through Hole
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Turn On Delay Time
- 25 ns
- JESD-609 Kodu
- e3
- Kılıf / Paket
- TO-247-3
- Reach Svhc
- No SVHC
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