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Support
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Specifications
- Power Dissipation
- 200W
- Rise Time
- 19ns
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Vgs Max
- ±30V
- Additional Feature
- HIGH VOLTAGE
- Vgsth Max Id
- 4.5V @ 100μA
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW11N
- Rds On Max Id Vgs
- 980m Ω @ 4.6A, 10V
- Threshold Voltage
- 3.75V
- Input Capacitance Ciss Max Vds
- 3000pF @ 25V
- Yükseklik
- 20.15mm
- Element Configuration
- Single
- Ambalaj
- Tube
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Power Dissipation Max
- 200W Tc
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 30V
- Continuous Drain Current Id
- 9.2A
- Parça Durumu
- Active
- Fet Type
- N-Channel
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 9.2A Tc
- Terminal Sayısı
- 3
- Genişlik
- 5.15mm
- Montaj Tipi
- Through Hole
- Turn On Delay Time
- 30 ns
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Fabrika Tedarik Süresi
- 12 Weeks
- Kılıf / Paket
- TO-247-3
- Reach Svhc
- No SVHC
- Jedec95 Code
- TO-247AC
- Seri
- SuperMESH™
- Uzunluk
- 15.75mm
- Fall Time Typ
- 50 ns
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