STW11NK100Z

Specifications

Ambalaj

Tube

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Rds On Max Id Vgs

1.38 Ω @ 4.15A, 10V

Threshold Voltage

3.75V

Input Capacitance Ciss Max Vds

3500pF @ 25V

Element Configuration

Single

Yükseklik

24.45mm

Akım Değeri

8.3A

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

230W Tc

Direnç

1.38Ohm

Pin Sayısı

3

Radyasyon Dayanımı

No

Vgs Max

±30V

Drain Currentmax Abs Id

9A

Max Junction Temperature Tj

150°C

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

18ns

Power Dissipation

230W

Temel Parça No

STW11N

Weight

9.071847g

Kurşunsuz

Lead Free

Additional Feature

AVALANCHE RATED, HIGH VOLTAGE

Number Of Channels

1

Vgsth Max Id

4.5V @ 100μA

Fall Time Typ

55 ns

Uzunluk

15.75mm

Drain To Source Breakdown Voltage

1kV

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fabrika Tedarik Süresi

12 Weeks

Reach Svhc

No SVHC

Kılıf / Paket

TO-247-3

Seri

SuperMESH™

Jedec95 Code

TO-247AC

Turn Off Delay Time

98 ns

Gate Charge Qg Max Vgs

162nC @ 10V

Drain To Source Voltage Vdss

1000V

RoHS Durumu

ROHS3 Compliant

Voltage Rated Dc

1kV