Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Elements
- 1
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation Max
- 130W Tc
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Voltage Vdss
- 950V
- Montaj
- Through Hole
- Gate Charge Qg Max Vgs
- 22nC @ 10V
- Turn Off Delay Time
- 51 ns
- Drainsource On Resistancemax
- 0.8Ohm
- Input Capacitance Ciss Max Vds
- 630pF @ 100V
- Seri
- SuperMESH5™
- Element Configuration
- Single
- Yükseklik
- 20.15mm
- Fabrika Tedarik Süresi
- 17 Weeks
- Rds On Max Id Vgs
- 800m Ω @ 4A, 10V
- Kılıf / Paket
- TO-247-3
- Ambalaj
- Tube
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Fall Time Typ
- 15 ns
- Uzunluk
- 15.75mm
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Vgsth Max Id
- 5V @ 100μA
- Turn On Delay Time
- 22 ns
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Montaj Tipi
- Through Hole
- Genişlik
- 5.15mm
- Kurşunsuz
- Lead Free
- Temel Parça No
- STW10N
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Rise Time
- 14ns
- Power Dissipation
- 130W
- Drive Voltage Max Rds On Min Rds On
- 10V
- Gate To Source Voltage Vgs
- 30V
- Drain Currentmax Abs Id
- 8A
- Fet Type
- N-Channel
- Parça Durumu
- Active
- Continuous Drain Current Id
- 8A
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