STV160NF02LT4

Specifications

Drive Voltage Max Rds On Min Rds On

5V 10V

Kılıf / Paket

PowerSO-10 Exposed Bottom Pad

Pulsed Drain Currentmax Idm

640A

Terminal Pozisyonu

DUAL

Vgsth Max Id

1V @ 250μA

Vgs Max

±15V

Turn Off Delay Time

80 ns

Akım Değeri

160A

Seri

STripFET™ II

Additional Feature

AVALANCHE RATED

Temel Parça No

STV160

Continuous Drain Current Id

160A

Element Configuration

Single

Avalanche Energy Rating Eas

1500 mJ

Terminal Formu

GULL WING

Fall Time Typ

240 ns

Drain To Source Breakdown Voltage

20V

Rds On Max Id Vgs

2.5m Ω @ 80A, 10V

Gate To Source Voltage Vgs

15V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

JESD-609 Kodu

e3

Rise Time

800ns

Voltage Rated Dc

20V

Ambalaj

Cut Tape (CT)

Number Of Elements

1

Pin Sayısı

12

Input Capacitance Ciss Max Vds

4800pF @ 15V

Jesd30 Code

R-PDSO-G10

Montaj

Surface Mount

Çalışma Sıcaklığı

175°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Obsolete

Terminal Kaplaması

Matte Tin (Sn) - annealed

Transistor Element Material

SILICON

Power Dissipation

210W

Fet Type

N-Channel

Gate Charge Qg Max Vgs

160nC @ 10V

Power Dissipation Max

210W Tc

Qualification Status

Not Qualified