STU7N80K5

Specifications

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

Rds On Max Id Vgs

1.2 Ω @ 3A, 10V

Rise Time

8.3ns

Fall Time Typ

20.2 ns

Avalanche Energy Rating Eas

88 mJ

Kurşunsuz

Lead Free

Drain To Source Breakdown Voltage

800V

Continuous Drain Current Id

6A

Yükseklik

6.2mm

Uzunluk

6.6mm

Element Configuration

Single

Case Connection

DRAIN

Temel Parça No

STU7N

Seri

SuperMESH5™

Vgsth Max Id

5V @ 100μA

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Turn Off Delay Time

23.7 ns

Vgs Max

±30V

Pulsed Drain Currentmax Idm

24A

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Radyasyon Dayanımı

No

Genişlik

2.4mm

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

6A

ECCN Kodu

EAR99

Transistor Application

SWITCHING

Current Continuous Drain Id25

6A Tc

Power Dissipation Max

110W Tc

Power Dissipation

110W

Gate Charge Qg Max Vgs

13.4nC @ 10V

Fet Type

N-Channel

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Parça Durumu

Active

Input Capacitance Ciss Max Vds

360pF @ 100V