STU7N60M2

Specifications

Avalanche Energy Rating Eas

99 mJ

Fall Time Typ

15.9 ns

Rise Time

7.2ns

Gate To Source Voltage Vgs

25V

Rds On Max Id Vgs

950m Ω @ 2.5A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Temel Parça No

STU7N

Case Connection

DRAIN

Element Configuration

Single

Yükseklik

6.2mm

Uzunluk

6.6mm

Continuous Drain Current Id

5A

Vgs Max

±25V

Turn Off Delay Time

19.3 ns

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

4V @ 250μA

Seri

MDmesh™ II Plus

Number Of Channels

1

Radyasyon Dayanımı

No

Pulsed Drain Currentmax Idm

20A

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Drive Voltage Max Rds On Min Rds On

10V

Drain Currentmax Abs Id

5A

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Genişlik

2.4mm

Ds Breakdown Voltagemin

600V

Power Dissipation Max

60W Tc

Current Continuous Drain Id25

5A Tc

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.95Ohm

Transistor Application

SWITCHING

Parça Durumu

Active

Transistor Element Material

SILICON

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Gate Charge Qg Max Vgs

8.8nC @ 10V

Drain To Source Voltage Vdss

600V