Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Gate Charge Qg Max Vgs
- 26nC @ 10V
- Ambalaj
- Tube
- Number Of Elements
- 1
- Turn On Delay Time
- 12 ns
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 12 Weeks
- Input Capacitance Ciss Max Vds
- 680pF @ 50V
- Threshold Voltage
- 3.75V
- Vgs Max
- ±30V
- Radyasyon Dayanımı
- No
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pulsed Drain Currentmax Idm
- 16.8A
- Drain To Source Breakdown Voltage
- 620V
- Avalanche Energy Rating Eas
- 120 mJ
- Fall Time Typ
- 21 ns
- Reach Svhc
- No SVHC
- Rise Time
- 8ns
- Rds On Max Id Vgs
- 1.6 Ω @ 2.1A, 10V
- Montaj Tipi
- Through Hole
- Uzunluk
- 6.6mm
- Continuous Drain Current Id
- 4.2A
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Direnç
- 1.6Ohm
- Power Dissipation
- 70W
- Pin Sayısı
- 3
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Genişlik
- 2.4mm
- Power Dissipation Max
- 70W Tc
- Pin Sayısı
- 3
- Current Continuous Drain Id25
- 4.2A Tc
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Turn Off Delay Time
- 40 ns
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
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