STU4N52K3

Specifications

Continuous Drain Current Id

2.5A

Uzunluk

10.4mm

Fall Time Typ

14 ns

Avalanche Energy Rating Eas

110 mJ

Drain To Source Breakdown Voltage

525V

Montaj Tipi

Through Hole

Rds On Max Id Vgs

2.6 Ω @ 1.25A, 10V

Rise Time

7ns

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

10A

Drive Voltage Max Rds On Min Rds On

10V

Radyasyon Dayanımı

No

Vgs Max

±30V

Threshold Voltage

3.75V

Turn On Delay Time

8 ns

Number Of Elements

1

Ambalaj

Tube

Fabrika Tedarik Süresi

12 Weeks

Input Capacitance Ciss Max Vds

334pF @ 100V

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

150°C TJ

Transistor Element Material

SILICON

Parça Durumu

Active

Gate Charge Qg Max Vgs

11nC @ 10V

Fet Type

N-Channel

Temel Parça No

STU4N

Tepe Reflow Sıcaklığı (°C)

260

Yükseklik

15.75mm

Element Configuration

Single

Kurşunsuz

Lead Free

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

30V

JESD-609 Kodu

e3

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Vgsth Max Id

4.5V @ 50μA

Lifecycle Status

ACTIVE (Last Updated: 7 months ago)

Turn Off Delay Time

21 ns

Seri

SuperMESH3™

Additional Feature

ULTRA-LOW RESISTANCE