Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- 150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Direnç
- 3Ohm
- Gate Charge Qg Max Vgs
- 17nC @ 10V
- Fet Type
- N-Channel
- Power Dissipation
- 45W
- Number Of Elements
- 1
- Ambalaj
- Tube
- Turn On Delay Time
- 9 ns
- Montaj
- Through Hole
- Input Capacitance Ciss Max Vds
- 386pF @ 50V
- Pin Sayısı
- 3
- Threshold Voltage
- 3.75V
- Genişlik
- 2.4mm
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Power Dissipation Max
- 45W Tc
- Current Continuous Drain Id25
- 2.5A Tc
- Pin Sayısı
- 3
- ECCN Kodu
- EAR99
- Transistor Application
- SWITCHING
- Turn Off Delay Time
- 30 ns
- Vgs Max
- ±30V
- Vgsth Max Id
- 4.5V @ 50μA
- Lifecycle Status
- NRND (Last Updated: 7 months ago)
- Additional Feature
- ULTRA-LOW RESISTANCE
- Seri
- SuperMESH3™
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-251-3 Short Leads, IPak, TO-251AA
- Drive Voltage Max Rds On Min Rds On
- 10V
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 620V
- Fall Time Typ
- 27 ns
- Avalanche Energy Rating Eas
- 90 mJ
- Rise Time
- 7ns
- Reach Svhc
- No SVHC
- Montaj Tipi
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
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