STU10N60M2

Specifications

Fet Type

N-Channel

Gate Charge Qg Max Vgs

13.5nC @ 10V

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Transistor Element Material

SILICON

Pin Sayısı

3

Input Capacitance Ciss Max Vds

400pF @ 100V

Fabrika Tedarik Süresi

26 Weeks

Montaj

Through Hole

Turn On Delay Time

8.8 ns

Ambalaj

Tube

Number Of Elements

1

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Genişlik

2.4mm

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.6Ohm

Transistor Application

SWITCHING

Current Continuous Drain Id25

7.5A Tc

Power Dissipation Max

85W Tc

Seri

MDmesh™ II Plus

Number Of Channels

1

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Vgsth Max Id

4V @ 250μA

Vgs Max

±25V

Turn Off Delay Time

32.5 ns

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-251-3 Short Leads, IPak, TO-251AA

Radyasyon Dayanımı

No

Gate To Source Voltage Vgs

25V

Rds On Max Id Vgs

600m Ω @ 3A, 10V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Rise Time

8ns

Fall Time Typ

13.2 ns

Drain To Source Breakdown Voltage

600V

Yükseklik

6.2mm

Uzunluk

6.6mm

Continuous Drain Current Id

7.5A