STSJ100NH3LL

Specifications

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Rds On Max Id Vgs

3.5m Ω @ 12.5A, 10V

Current Continuous Drain Id25

100A Tc

Gate Charge Qg Max Vgs

40nC @ 4.5V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Vgs Max

±16V

Seri

STripFET™ III

Transistor Application

SWITCHING

Case Connection

DRAIN

JESD-609 Kodu

e4

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Configuration

SINGLE WITH BUILT-IN DIODE

Gate To Source Voltage Vgs

16V

ECCN Kodu

EAR99

Drain To Source Breakdown Voltage

30V

Number Of Elements

1

Power Dissipation Max

3W Ta 70W Tc

Montaj Tipi

Surface Mount

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width) Exposed Pad

Power Dissipation

70W

Rise Time

50ns

Pin Sayısı

8

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Ambalaj

Tape & Reel (TR)

Fall Time Typ

8 ns

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

400A

Akım Değeri

25A

Tepe Reflow Süresi (maks. sn)

30

Terminal Formu

GULL WING

Montaj

Surface Mount

Vgsth Max Id

1V @ 250μA

Drainsource On Resistancemax

0.005Ohm

Fet Type

N-Channel

Temel Parça No

STSJ100N

Voltage Rated Dc

30V

Turn Off Delay Time

75 ns