Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Transistor Type
- NPN
- Element Configuration
- Single
- Vce Saturation Max Ib Ic
- 600mV @ 200mA, 5A
- Çalışma Sıcaklığı
- 150°C TJ
- Fabrika Tedarik Süresi
- 8 Weeks
- Collector Base Voltage Vcbo
- 150V
- Pin Sayısı
- 3
- Radyasyon Dayanımı
- No
- Transition Frequency
- 150MHz
- Max Power Dissipation
- 1.1W
- ECCN Kodu
- EAR99
- Montaj
- Through Hole
- Transistor Element Material
- SILICON
- RoHS Durumu
- ROHS3 Compliant
- Akım Değeri
- 3A
- Max Breakdown Voltage
- 60V
- JESD-609 Kodu
- e3
- Gain Bandwidth Product
- 150MHz
- Current Collector Cutoff Max
- 100nA ICBO
- Polaritychannel Type
- NPN
- Ambalaj
- Tape & Box (TB)
- Collectoremitter Saturation Voltage
- 200mV
- Pin Sayısı
- 3
- Terminal Pozisyonu
- BOTTOM
- Number Of Elements
- 1
- Frekans
- 150MHz
- Collectoremitter Breakdown Voltage
- 60V
- Collector Emitter Voltage Vceo
- 60V
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 100mA 2V
- Voltage Rated Dc
- 60V
- Temel Parça No
- STSA1805
- Hfemin
- 20
- Power Dissipation
- 1.1W
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage Vebo
- 7V
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj Tipi
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
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