STS7NF60L

Specifications

Seri

STripFET™ II

Transistor Application

SWITCHING

Yükseklik

1.75mm

Number Of Channels

1

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Vgs Max

±16V

Gate Charge Qg Max Vgs

34nC @ 4.5V

Current Continuous Drain Id25

7.5A Tc

Direnç

19.5mOhm

Drive Voltage Max Rds On Min Rds On

5V 10V

Nominal Vgs

1 V

Rds On Max Id Vgs

19.5m Ω @ 3.5A, 10V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

16V

Configuration

SINGLE WITH BUILT-IN DIODE

JESD-609 Kodu

e3

Additional Feature

LOW THRESHOLD

Max Junction Temperature Tj

150°C

Power Dissipation Max

2.5W Tc

Number Of Elements

1

Drain To Source Breakdown Voltage

60V

Turn On Delay Time

15 ns

Avalanche Energy Rating Eas

350 mJ

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2.5W

Montaj Tipi

Surface Mount

Terminal Sayısı

8

Fabrika Tedarik Süresi

12 Weeks

Tepe Reflow Sıcaklığı (°C)

260

Pin Sayısı

8

Radyasyon Dayanımı

No

Rise Time

27ns

Vgsth Max Id

1V @ 250μA

Montaj

Surface Mount

Tepe Reflow Süresi (maks. sn)

30

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

30A

Akım Değeri

7.5A