STS6NF20V

Specifications

Gate To Source Voltage Vgs

12V

ECCN Kodu

EAR99

Transistor Element Material

SILICON

JESD-609 Kodu

e4

Yükseklik

1.25mm

Transistor Application

SWITCHING

Seri

STripFET™ II

Element Configuration

Single

Vgs Max

±12V

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

150°C TJ

Uzunluk

5mm

Current Continuous Drain Id25

6A Tc

Gate Charge Qg Max Vgs

11.5nC @ 4.5V

Rds On Max Id Vgs

40m Ω @ 3A, 4.5V

Drive Voltage Max Rds On Min Rds On

1.95V 4.5V

Power Dissipation

2.5W

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Power Dissipation Max

2.5W Tc

Number Of Elements

1

Drain To Source Breakdown Voltage

20V

Turn On Delay Time

7 ns

Drainsource On Resistancemax

0.045Ohm

Montaj

Surface Mount

Vgsth Max Id

600mV @ 250μA

Terminal Formu

GULL WING

RoHS Durumu

ROHS3 Compliant

Pulsed Drain Currentmax Idm

24A

Tepe Reflow Süresi (maks. sn)

30

Ambalaj

Tape & Reel (TR)

Fall Time Typ

10 ns

Genişlik

4mm

Terminal Sayısı

8

Tepe Reflow Sıcaklığı (°C)

260

Fabrika Tedarik Süresi

12 Weeks

Radyasyon Dayanımı

No

Pin Sayısı

8

Rise Time

33ns

Input Capacitance Ciss Max Vds

460pF @ 15V