STS5PF30L

Specifications

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Power Dissipation

2.5W

Montaj Tipi

Surface Mount

Power Dissipation Max

2.5W Tc

Number Of Elements

1

Drain To Source Breakdown Voltage

-30V

Turn On Delay Time

25 ns

ECCN Kodu

EAR99

Gate To Source Voltage Vgs

16V

Transistor Element Material

SILICON

Drain To Source Voltage Vdss

30V

JESD-609 Kodu

e4

Additional Feature

LOW THRESHOLD

Transistor Application

SWITCHING

Yükseklik

1.65mm

Seri

STripFET™

Vgs Max

±16V

Element Configuration

Single

Operating Mode

ENHANCEMENT MODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Uzunluk

5mm

Direnç

55mOhm

Gate Charge Qg Max Vgs

16nC @ 5V

Current Continuous Drain Id25

5A Tc

Rds On Max Id Vgs

55m Ω @ 2.5A, 10V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Input Capacitance Ciss Max Vds

1350pF @ 25V

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Kurşunsuz

Lead Free

Nem Hassasiyeti (MSL)

1 (Unlimited)

Threshold Voltage

1.6V

Parça Durumu

Obsolete

Continuous Drain Current Id

5A

Pin Sayısı

8

Drain Currentmax Abs Id

5A

Reach Svhc

No SVHC

Terminal Pozisyonu

DUAL

Turn Off Delay Time

125 ns

Voltage Rated Dc

-30V

Temel Parça No

STS5P