STS26N3LLH6

Specifications

Gate To Source Voltage Vgs

20V

Montaj

Surface Mount

Vgs Max

±20V

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Seri

DeepGATE™, STripFET™ VI

Rds On Max Id Vgs

4.4m Ω @ 13A, 10V

Fall Time Typ

46 ns

Current Continuous Drain Id25

26A Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Input Capacitance Ciss Max Vds

4040pF @ 25V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Nominal Vgs

1 V

Terminal Pozisyonu

DUAL

Number Of Elements

1

Drain To Source Breakdown Voltage

30V

Reach Svhc

No SVHC

Parça Durumu

Active

Temel Parça No

STS26

Avalanche Energy Rating Eas

525 mJ

Power Dissipation Max

2.7W Ta

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Terminal Sayısı

8

Element Configuration

Single

Threshold Voltage

1V

Turn On Delay Time

17 ns

Pin Sayısı

8

Vgsth Max Id

1V @ 250μA

Pin Sayısı

8

Ambalaj

Cut Tape (CT)

Power Dissipation

2.7W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Continuous Drain Current Id

26A

Transistor Application

SWITCHING

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Rise Time

18ns

Gate Charge Qg Max Vgs

40nC @ 4.5V

Transistor Element Material

SILICON