STS11N3LLH5

Specifications

Turn Off Delay Time

21 ns

Direnç

13.2mOhm

Radyasyon Dayanımı

No

Transistor Element Material

SILICON

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Rise Time

4.2ns

Gate Charge Qg Max Vgs

5nC @ 4.5V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Continuous Drain Current Id

11A

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

30

Pin Sayısı

8

Turn On Delay Time

4 ns

Reach Svhc

No SVHC

Drain To Source Breakdown Voltage

30V

Parça Durumu

Obsolete

Terminal Pozisyonu

DUAL

Number Of Elements

1

Nominal Vgs

1 V

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

724pF @ 25V

Rds On Max Id Vgs

14m Ω @ 5.5A, 10V

Current Continuous Drain Id25

11A Tc

Seri

STripFET™ V

Tepe Reflow Sıcaklığı (°C)

260

Vgs Max

+22V, -20V

Gate To Source Voltage Vgs

22V

Montaj

Surface Mount

ECCN Kodu

EAR99

Fet Type

N-Channel

Terminal Formu

GULL WING

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Kurşunsuz Kodu

yes

Pulsed Drain Currentmax Idm

44A

Power Dissipation

2.7W

JESD-609 Kodu

e4

Pin Sayısı

8

Vgsth Max Id

1V @ 250μA