STR2N2VH5

Specifications

Vgs Max

±8V

Montaj

Surface Mount

Gate To Source Voltage Vgs

8V

Yükseklik

1.3mm

Rds On Max Id Vgs

30m Ω @ 2A, 4.5V

Input Capacitance Ciss Max Vds

367pF @ 16V

Çalışma Sıcaklığı

-55°C~150°C TJ

Drive Voltage Max Rds On Min Rds On

2.5V 4.5V

Seri

STripFET™ V

Number Of Elements

1

Terminal Pozisyonu

DUAL

Parça Durumu

Active

Drain To Source Breakdown Voltage

20V

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Dissipation Max

350mW Tc

Temel Parça No

STR2

Pin Sayısı

3

Vgsth Max Id

700mV @ 250μA (Min)

Terminal Sayısı

3

Uzunluk

3.04mm

Lifecycle Status

ACTIVE (Last Updated: 8 months ago)

Element Configuration

Single

Genişlik

1.75mm

Transistor Application

SWITCHING

Continuous Drain Current Id

2.3A

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

350mW

Ambalaj

Cut Tape (CT)

Terminal Formu

GULL WING

Transistor Element Material

SILICON

Fet Type

N-Channel

Fabrika Tedarik Süresi

14 Weeks

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Gate Charge Qg Max Vgs

4.6nC @ 4.5V

ECCN Kodu

EAR99

Radyasyon Dayanımı

No

Direnç

30mOhm