Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Ds Breakdown Voltagemin
- 600V
- Terminal Pozisyonu
- BOTTOM
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Fall Time Typ
- 50 ns
- Gate Charge Qg Max Vgs
- 15nC @ 10V
- Pin Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Rds On Max Id Vgs
- 4.8 Ω @ 1A, 10V
- Pulsed Drain Currentmax Idm
- 2A
- Drain To Source Voltage Vdss
- 600V
- Drain Currentmax Abs Id
- 0.5A
- Fabrika Tedarik Süresi
- 8 Weeks
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 280pF @ 25V
- Current Continuous Drain Id25
- 500mA Tc
- Operating Mode
- ENHANCEMENT MODE
- Turn Off Delay Time
- 13 ns
- Turn On Delay Time
- 10 ns
- RoHS Durumu
- ROHS3 Compliant
- Temel Parça No
- STQ2
- Kurşunsuz
- Lead Free
- Rise Time
- 30ns
- Continuous Drain Current Id
- 500mA
- Avalanche Energy Rating Eas
- 120 mJ
- JESD-609 Kodu
- e3
- Contact Plating
- Tin
- Montaj Tipi
- Through Hole
- Fet Type
- N-Channel
- Seri
- SuperMESH™
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Ambalaj
- Tape & Box (TB)
- Terminal Sayısı
- 3
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