Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yükseklik
- 6.35mm
- Gate Charge Qg Max Vgs
- 6.9nC @ 10V
- Drive Voltage Max Rds On Min Rds On
- 10V
- Transistor Element Material
- SILICON
- Ds Breakdown Voltagemin
- 600V
- Parça Durumu
- Active
- Vgs Max
- ±30V
- Weight
- 4.535924g
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Temel Parça No
- STQ1
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 15 Ω @ 400mA, 10V
- Fabrika Tedarik Süresi
- 8 Weeks
- ECCN Kodu
- EAR99
- Montaj Tipi
- Through Hole
- Fet Type
- N-Channel
- Seri
- SuperMESH™
- Continuous Drain Current Id
- 400mA
- Avalanche Energy Rating Eas
- 60 mJ
- JESD-609 Kodu
- e3
- Montaj
- Through Hole
- Power Dissipation Max
- 3W Tc
- Terminal Sayısı
- 3
- Lifecycle Status
- ACTIVE (Last Updated: 7 months ago)
- Fall Time Typ
- 28 ns
- Pin Sayısı
- 3
- Pin Sayısı
- 3
- Terminal Pozisyonu
- BOTTOM
- Gate To Source Voltage Vgs
- 30V
- Current Continuous Drain Id25
- 300mA Tc
- Turn Off Delay Time
- 13 ns
- Power Dissipation
- 3W
- Turn On Delay Time
- 5.5 ns
- Uzunluk
- 31.75mm
- Transistor Application
- SWITCHING
- Radyasyon Dayanımı
- No
- Drain To Source Voltage Vdss
- 600V
- Input Capacitance Ciss Max Vds
- 94pF @ 25V
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