STQ1NC45R-AP

Specifications

Pin Sayısı

3

Qualification Status

Not Qualified

Drive Voltage Max Rds On Min Rds On

10V

Gate Charge Qg Max Vgs

7nC @ 10V

Parça Durumu

Active

Vgs Max

±30V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

450V

Terminal Pozisyonu

SINGLE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Transistor Element Material

SILICON

Temel Parça No

STQ1

REACH Uyumluluk Kodu

not_compliant

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

500mA Tc

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

160pF @ 25V

Fabrika Tedarik Süresi

8 Weeks

Drain Currentmax Abs Id

0.5A

Transistor Application

SWITCHING

Rds On Max Id Vgs

4.5 Ω @ 500mA, 10V

Pulsed Drain Currentmax Idm

2A

Drain To Source Voltage Vdss

450V

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Fet Type

N-Channel

Seri

SuperMESH™

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Through Hole

JESD-609 Kodu

e3

Avalanche Energy Rating Eas

25 mJ

Kurşunsuz Kodu

yes

Continuous Drain Current Id

500mA

Vgsth Max Id

3.7V @ 250μA

Power Dissipation Max

3.1W Tc

Jesd30 Code

R-PSIP-T3

Montaj

Through Hole

Çalışma Sıcaklığı

-65°C~150°C TJ

Terminal Kaplaması

Matte Tin (Sn)