Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Seri
- SuperMESH™
- Genişlik
- 4.6mm
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 1110pF @ 25V
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 43 ns
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 3
- Temel Parça No
- STP9N
- Number Of Elements
- 1
- Fall Time Typ
- 15 ns
- Akım Değeri
- 7A
- Drain To Source Breakdown Voltage
- 600V
- Power Dissipation
- 125W
- Rise Time
- 17ns
- Continuous Drain Current Id
- 3.5A
- Kılıf / Paket
- TO-220-3
- Gate To Source Voltage Vgs
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 950m Ω @ 3.5A, 10V
- Vgs Max
- ±30V
- Turn On Delay Time
- 19 ns
- Power Dissipation Max
- 125W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Current Continuous Drain Id25
- 7A Tc
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 10.4mm
- Reach Svhc
- No SVHC
- Vgsth Max Id
- 4.5V @ 100μA
- Pulsed Drain Currentmax Idm
- 28A
- Terminal Sayısı
- 3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Yükseklik
- 9.15mm
- Montaj
- Through Hole
- Voltage Rated Dc
- 600V
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