STP90NF03L

Specifications

Ambalaj

Tube

Power Dissipation Max

150W Tc

Element Configuration

Single

Contact Plating

Tin

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

6.5m Ω @ 45A, 10V

Seri

STripFET™

Çalışma Sıcaklığı

-65°C~175°C TJ

Transistor Application

SWITCHING

Vgs Max

±20V

Turn On Delay Time

30 ns

Vgsth Max Id

2.5V @ 250μA

Montaj Tipi

Through Hole

RoHS Durumu

ROHS3 Compliant

Turn Off Delay Time

50 ns

Jesd30 Code

R-PSFM-T3

Transistor Element Material

SILICON

Current Continuous Drain Id25

90A Tc

Input Capacitance Ciss Max Vds

2700pF @ 25V

Number Of Elements

1

Montaj

Through Hole

Voltage Rated Dc

30V

Pin Sayısı

3

Pulsed Drain Currentmax Idm

360A

Terminal Sayısı

3

Drive Voltage Max Rds On Min Rds On

5V 10V

Temel Parça No

STP90N

Rise Time

200ns

Power Dissipation

150W

Gate Charge Qg Max Vgs

47nC @ 5V

Continuous Drain Current Id

90A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

TO-220-3

Operating Mode

ENHANCEMENT MODE

Kurşunsuz

Lead Free

Parça Durumu

Not For New Designs

Radyasyon Dayanımı

No

Akım Değeri

90A

Drain To Source Breakdown Voltage

30V

Drainsource On Resistancemax

0.0065Ohm