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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgsth Max Id
- 4.5V @ 100μA
- Current Continuous Drain Id25
- 6.2A Tc
- Uzunluk
- 10.4mm
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation Max
- 140W Tc
- Element Configuration
- Single
- Ambalaj
- Tube
- Vgs Max
- ±30V
- Turn On Delay Time
- 17 ns
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 1.5 Ω @ 3.1A, 10V
- Parça Durumu
- Active
- Kurşunsuz
- Lead Free
- Radyasyon Dayanımı
- No
- Fabrika Tedarik Süresi
- 12 Weeks
- Gate Charge Qg Max Vgs
- 46nC @ 10V
- Fet Type
- N-Channel
- ECCN Kodu
- EAR99
- Lifecycle Status
- ACTIVE (Last Updated: 8 months ago)
- Jedec95 Code
- TO-220AB
- JESD-609 Kodu
- e3
- Voltage Rated Dc
- 800V
- Yükseklik
- 15.75mm
- Montaj
- Through Hole
- Pulsed Drain Currentmax Idm
- 24.8A
- Drive Voltage Max Rds On Min Rds On
- 10V
- Terminal Sayısı
- 3
- Transistor Element Material
- SILICON
- Input Capacitance Ciss Max Vds
- 1320pF @ 25V
- Pin Sayısı
- 3
- Montaj Tipi
- Through Hole
- Turn Off Delay Time
- 48 ns
- Contact Plating
- Tin
- Genişlik
- 4.6mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Seri
- SuperMESH™
- Kılıf / Paket
- TO-220-3
- Continuous Drain Current Id
- 6.2A
- Gate To Source Voltage Vgs
- 30V
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